Items where Author is "Yow, H. K."

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Number of items: 16.

Article

Balachandran, Ruthramurthy and Kakumani, Asa Deepthi and Ong, Boon Hoong and Wong, Hin Yong and Daud, Z. B. M. and Yow, H. K. and Tan, K. B. (2014) Phase formation and surface morphology of nickel doped Ba1-xSrxTiO3 ceramics prepared by sol-gel technique. Materials Research Innovations, 18 (S6). pp. 453-456. ISSN 1433-075X

Yong, Y. S. and Wong, H. Y. and Yow, H. K. (2011) Novel Separate Confinement Heterostructure Design for Long-Wavelength Lasers. IEEE Electron Device Letters, 32 (7). pp. 925-927. ISSN 0741-3106

Balachandran, R. and Yow, H. K. and Ong, B. H. and Tan, K. B. and Anuar, K. and Teoh, W. T. and Ahmad Fauzi, M. N. and Sreekantan, S. and Swaminathan, V. (2011) Phase formation and dielectric properties of Ba0.5Sr0.5TiO3 by slow injection sol–gel technique. Journal of Materials Science, 46 (6). pp. 1806-1813. ISSN 0022-2461

Tan, K. B. and Anuar, K. and Balachandran, R. and Yow, H. K. and Ong, B. H. and Wong, H. Y. (2011) Surface morphology and electrical properties of pulse electrodeposition of NiFe Films on Copper substrates in ultrasonic field. International Journal of Electrochemical Science, 6 (8). pp. 3564-3579. ISSN 1452-3981

Tan, S. L. and Ong, D. S. and Yow, H. K. (2007) Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes. Journal of Applied Physics, 102 (4). 044506. ISSN 00218979

Tan, S. L. and Ong, D. S. and Yow, H. K. (2007) Advantages of thin single-photon avalanche diodes. physica status solidi (a), 204 (7). pp. 2495-2499. ISSN 18626300

Poh, Z. S. and Yow, H. K. and Ong, D. S. and Houston, P. A. and Krysa, A. B. (2007) Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors. Journal of Applied Physics, 101 (8). 086111. ISSN 00218979

Poh, Z. S. and Yow, H. K. and Ong, D. S. and Houston, P. A. and Krysa, A. B. (2007) Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors. Journal of Applied Physics, 101 (8). 086111. ISSN 00218979

Poh, Z. S. and Yow, H. K. and Houston, P. A. and Krysa, A. B. and Ong, D. S. (2006) GaInP∕GaAs double heterojunction bipolar transistor with GaAs∕Al[sub 0.11]Ga[sub 0.89]As∕GaInP composite collector. Journal of Applied Physics, 100 (2). 026105. ISSN 00218979

Lee, W. P. and Yow, H. K. and Tou, T. Y. (2006) Characterization of Crystal-Originated Particles in Silicon Nitride Doped, CZ-Grown Silicon Wafers. Journal of The Electrochemical Society, 153 (3). G248-G252. ISSN 00134651

Lee, W. P. and Teh, E. P. and Yow, H. K. and Choong, C. L. and Tou, T. Y. (2005) Enhanced gettering of iron impurities in bulk silicon by using external direct current electric field. Journal of Electronic Materials, 34 (7). L25-29. ISSN 0361-5235

Goh, Y. L. and Ong, D. S. and Yow, H. K. (2004) An analytical study of current-voltage characteristics and breakdown performance of GaInP∕GaAs composite collector double heterojunction bipolar transistor. Journal of Applied Physics, 96 (8). pp. 4514-4517. ISSN 00218979

Goh, Y. L. and Ong, D. S. and Yow, H. K. (2004) An analytical study of current-voltage characteristics and breakdown performance of GaInP∕GaAs composite collector double heterojunction bipolar transistor. Journal of Applied Physics, 96 (8). p. 4514. ISSN 00218979

Lee, W. P. and Yow, H. K. and Tou, T. Y. (2004) Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers. Electrochemical and Solid-State Letters, 7 (11). G282-G285. ISSN 10990062

Lee, W. P. and Teh, E. P. and Yow, H. K. and Choong, C. L. and Tou, T. Y. (2004) Polysilicon Encapsulation Gettering with Electric-Field-Enhanced Isothermal Annealing for Copper Impurities in Bulk Silicon. Electrochemical and Solid-State Letters, 7 (12). G299-G301. ISSN 10990062

Lee, W. P. and Seow, W. S. and Yow, H. K. and Tou, T. Y. (2001) Analysis of Atomic Force Microscopy Images of Crystal Originated “Particles” on Silicon Wafers Treated with NH4OH:H2O2:H2O Solution. Japanese Journal of Applied Physics, 40 (Part 1, No. 1). pp. 18-23. ISSN 0021-4922

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