Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors


Poh, Z. S. and Yow, H. K. and Ong, D. S. and Houston, P. A. and Krysa, A. B. (2007) Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors. Journal of Applied Physics, 101 (8). 086111. ISSN 00218979

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GaInP/GaAs/GaInP double heterojunction bipolar transistors incorporating dead-space corrected composite collectors were investigated experimentally. The optimized DHBT with a 10-nm lowly doped GaAs spacer and a 5-nm highly doped GaInP spacer has extended the operating range of the collector-emitter voltage, V(CE), by maximizing the collector-emitter voltage at the onset of the multiplication, V(CE,onset), to 20 V, while minimizing the saturation voltage, V(CE,sat) (< 1 V), and maintaining the nominal breakdown voltage, BV(CEO), of the GaInP collector at 25 V. The design incorporating an Al(0.11)Ga(0.89)As spacer rather than a GaInP spacer within the lowly doped GaAs-GaInP composite collector demonstrated similar breakdown behavior. (c) 2007 American Institute of Physics.

Item Type: Article
Subjects: T Technology > T Technology (General)
Q Science > QC Physics
Divisions: Faculty of Engineering and Technology (FET)
Depositing User: Ms Suzilawati Abu Samah
Date Deposited: 29 Sep 2011 03:55
Last Modified: 29 Sep 2011 03:55


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