Citation

Poh, Z. S. and Yow, H. K. and Ong, D. S. and Houston, P. A. and Krysa, A. B. (2007) Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors. Journal of Applied Physics, 101 (8). 086111. ISSN 00218979

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Abstract

GaInP/GaAs/GaInP double heterojunction bipolar transistors incorporating dead-space corrected composite collectors were investigated experimentally. The optimized DHBT with a 10-nm lowly doped GaAs spacer and a 5-nm highly doped GaInP spacer has extended the operating range of the collector-emitter voltage, VCE, by maximizing the collector-emitter voltage at the onset of the multiplication, VCE,onset, to 20 V, while minimizing the saturation voltage, VCE,sat (<1 V), and maintaining the nominal breakdown voltage, BVCEO, of the GaInP collector at 25 V. The design incorporating an Al0.11Ga0.89As spacer rather than a GaInP spacer within the lowly doped GaAs-GaInP composite collector demonstrated similar breakdown behavior.

Item Type:	Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Suzilawati Abu Samah
Date Deposited:	04 Sep 2013 04:12
Last Modified:	04 Sep 2013 04:12
URII:	http://shdl.mmu.edu.my/id/eprint/3926

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