Citation

Tan, S. L. and Ong, D. S. and Yow, H. K. (2007) Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes. Journal of Applied Physics, 102 (4). 044506. ISSN 00218979

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Abstract

A simple random ionization path length model is used to investigate the breakdown probabilities and jitter in single photon avalanche diodes (SPADs) with submicron multiplication widths. The simulation results show that increasing the multiplication width may not necessarily increase the breakdown probability relative to the breakdown voltage, as the effect of dead space becomes more dominant in thinner multiplication regions at realistic ionization threshold energies for GaAs. On the other hand, reducing the multiplication width results in smaller breakdown time and jitter, despite the increased dead space. The effect of dead space in degrading breakdown time and jitter is relatively weak and further compensated by the stronger influence of large feedback ionization at high fields. Thus, SPAD designs that can minimize the dark count rate may potentially benefit from enhanced breakdown probability, breakdown time, and jitter by reducing the thickness of the multiplication region. (C) 2007 American Institute of Physics.

Item Type:	Article
Subjects:	T Technology > T Technology (General) Q Science > QC Physics
Divisions:	Faculty of Engineering and Technology (FET)
Depositing User:	Ms Suzilawati Abu Samah
Date Deposited:	29 Sep 2011 06:24
Last Modified:	29 Sep 2011 06:24
URII:	http://shdl.mmu.edu.my/id/eprint/3019

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