GaInP∕GaAs double heterojunction bipolar transistor with GaAs∕Al[sub 0.11]Ga[sub 0.89]As∕GaInP composite collector

Poh, Z. S. and Yow, H. K. and Houston, P. A. and Krysa, A. B. and Ong, D. S. (2006) GaInP∕GaAs double heterojunction bipolar transistor with GaAs∕Al[sub 0.11]Ga[sub 0.89]As∕GaInP composite collector. Journal of Applied Physics, 100 (2). 026105. ISSN 00218979

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Official URL: http://dx.doi.org/10.1063/1.2218027

Abstract

GaInP/GaAs/GaInP double heterojunction bipolar transistor (DHBT) with an Al0.11Ga0.89As layer within lowly doped GaAs–GaInP composite collector was characterized. In comparison to an abrupt GaInP/GaAs/GaInP DHBT with saturation voltages in excess of 20 V, current gains of 25 at high biases, and breakdown voltages in the range of 22 V, the DHBT incorporating GaAs–Al0.11Ga0.89As–GaInP composite collector has demonstrated lower saturation voltages of less than 6 V and high current gains of 50 without compromising the breakdown voltages of the GaInP collector. Al0.11Ga0.89As layer can thus provide an alternative design to effectively minimize the potential spike effects at the GaAs/GaInP heterojunction.

Item Type: Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Suzilawati Abu Samah
Date Deposited: 04 Sep 2013 07:13
Last Modified: 04 Sep 2013 07:13
URI: http://shdl.mmu.edu.my/id/eprint/3929

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