Enhanced gettering of iron impurities in bulk silicon by using external direct current electric field

Lee, W. P. and Teh, E. P. and Yow, H. K. and Choong, C. L. and Tou, T. Y. (2005) Enhanced gettering of iron impurities in bulk silicon by using external direct current electric field. Journal of Electronic Materials, 34 (7). L25-29. ISSN 0361-5235

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Official URL: http://dx.doi.org/10.1007/s11664-005-0101-x

Abstract

Iron impurities in bulk silicon are found to getter efficiently at the polysilicon layer by an electric field during isothermal annealing. Experimental results show that iron concentration at the polysilicon layer increases to the level that becomes detectable by total reflection x-ray fluorescence (TXRF) spectroscopy. The improved gettering efficiency for iron is attributed mainly to the directional drift of ionic iron interstitials toward the polysilicon gettering sites, under the influence of the applied potential gradient, thus presenting a more effective method for reducing the iron content in silicon.

Item Type: Article
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 12 Aug 2011 01:30
Last Modified: 12 Aug 2011 01:30
URI: http://shdl.mmu.edu.my/id/eprint/2212

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