Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers

Lee, W. P. and Yow, H. K. and Tou, T. Y. (2004) Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers. Electrochemical and Solid-State Letters, 7 (11). G282-G285. ISSN 10990062

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Official URL: http://dx.doi.org/10.1149/1.1808093

Abstract

Surface analyses by atomic force microscopy and field-emission scanning electron microscopy have revealed new shape of truncated voids, commonly known as crystal-originated-particles (COPs), that appear as kite-shaped pits with two (111) planes and two non-(111) planes in twin and triplet clusters, when viewed from the surface plane of nitrogen-doped Czochralski (CZ)-grown silicon (100) wafers. Also, the detection of higher number density but smaller size for these COPs indicates that the presence of nitrogen during CZ-growth of silicon crystals has strong influence on the size and density of COPs. (C) 2004 The Electrochemical Society.

Item Type: Article
Subjects: Q Science > Q Science (General)
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 22 Aug 2011 02:28
Last Modified: 22 Aug 2011 02:28
URI: http://shdl.mmu.edu.my/id/eprint/2493

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