Modelling Of Single Photon Avalanche Diodes

Citation

Li, Tan Siew (2008) Modelling Of Single Photon Avalanche Diodes. Masters thesis, Multimedia University.

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Abstract

The avalanche dynamics in single photon avalanche diodes (SPADs) in the form of GaAs p+ -i-n+ diode structures was investigated theoretically using a simple random ionisation path length (RPL) MODEL. In the RPL model, the avalanche multiplication process in the i-region of a diode is modelled by generating random carrier trajectories, which may result in impact ionisation as described by an exponentially decaying probability distribution function (PDF) of the ionisation path length following a hard-threshold dead space.

Item Type: Thesis (Masters)
Subjects: Q Science > QA Mathematics > QA71-90 Instruments and machines > QA75.5-76.95 Electronic computers. Computer science > QA76.75-76.765 Computer software
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Suzilawati Abu Samah
Date Deposited: 21 May 2010 08:45
Last Modified: 21 May 2010 08:45
URII: http://shdl.mmu.edu.my/id/eprint/321

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