Citation

YOU, A and CHEANG, P (2008) Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD. Microelectronics Reliability, 48 (4). pp. 547-554. ISSN 00262714

Text (Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD) 792.pdf - Published Version Restricted to Repository staff only Download (0B)

Abstract

A realistic full-band Monte Carlo (FBMC) model is applied to study the effect of doping concentration on multiplication gain and excess noise factor for electron- and hole-initiated multiplication ill thin InP p(+)-i-n(+) diodes with a range of multiplication lengths of w = 0.1 and 0.24 mu m. This model predicts a reduction in excess noise factor for both electron- and hole-initiated multiplication as the doping concentration increases. Besides dead-space effect and feedback impact ionization, the electric field profile controlled by the doping concentration significantly contributes to the fall of excess noise in submicron InP p(+)-i-n(+) diodes. (c) 2007 Elsevier Ltd. All rights reserved.

Item Type:	Article
Subjects:	T Technology > T Technology (General) Q Science > QA Mathematics > QA71-90 Instruments and machines > QA75.5-76.95 Electronic computers. Computer science
Divisions:	Faculty of Engineering and Technology (FET)
Depositing User:	Ms Suzilawati Abu Samah
Date Deposited:	13 Sep 2011 03:12
Last Modified:	13 Feb 2014 07:48
URII:	http://shdl.mmu.edu.my/id/eprint/2752

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