Article

Ong, Duu Sheng and Jin, Xiao and Yeoh, Keat Hoe and Tan, Ai Hui and Choo, Kan Yeep and David, John P R (2026) Modelling of electron and hole ionisation in Al x Ga1− x As0.56Sb0.44 alloys using Weibull–Fréchet distributions. Journal of Physics D: Applied Physics, 59 (2). 025103. ISSN 0022-3727

Jin, Xiao and Yi, Xin and Ng, Beng Koon and Tan, Chee Hing and Ong, Duu Sheng and David, John P. R. (2026) A model to determine multiplication and noise in avalanche photodiodes with non-uniform electric field. AIP Advances, 16 (5). ISSN 2158-3226

Ong, Duu Sheng and Tan, Ai Hui and Jin, Xiao and David, John P R (2025) Random path length analysis of gain and noise in e-APDs for electron ionisation characterisation. Semiconductor Science and Technology, 40 (12). p. 125011. ISSN 0268-1242

Lewis, Harry I. J. and Jin, Xiao and Guo, Bingtian and Lee, Seunghyun and Jung, Hyemin and Kodati, Sri Harsha and Liang, Baolai and Krishna, Sanjay and Ong, Duu Sheng and Campbell, Joe C. and David, John P. R. (2023) Anomalous excess noise behavior in thick Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes. Scientific Reports, 13 (1). ISSN 2045-2322

Jin, Xiao and Xie, Shiyu and Liang, Baolai and Yi, Xin and Lewis, Harry and Lim, Leh W. and Liu, Yifan and Ng, Beng Koon and Huffaker, Diana L. and Tan, Chee Hing and Ong, Duu Sheng and David, John P. R. (2022) Temperature Dependence of the Impact Ionization Coefficients in AlAsSb Lattice Matched to InP. IEEE Journal of Selected Topics in Quantum Electronics, 28 (2). pp. 1-8. ISSN 1077-260X

Conference or Workshop Item

Jin, Xiao and Xie, Shiyu and Liang, Baolai L. and Yi, Xin and Lewis, Harry and Lim, Leh Woon and Liu, Yifan and Ng, Beng Koon and Huffaker, Diana L. and Tan, Chee Hing and Ong, Duu Sheng and David, John P. R. (2022) Comparison of the temperature dependence of impact ionization coefficients in AlAsSb, InAlAs, and InP. In: Optical Components and Materials XIX 2022, 20-24 Feb 2022, Online Conference.