Citation

Ong, Duu Sheng and Tan, Ai Hui and Jin, Xiao and David, John P R (2025) Random path length analysis of gain and noise in e-APDs for electron ionisation characterisation. Semiconductor Science and Technology, 40 (12). p. 125011. ISSN 0268-1242

Text Random path length analysis of gain and noise in e-APDs for electron ionisation characterisation - IOPscience.pdf - Published Version Restricted to Repository staff only Download (1MB)

Abstract

IOP Science home Accessibility Help Journals Books Publishing Support Login Semiconductor Science and Technology Purpose-Led Publishing, find out more. Paper Random path length analysis of gain and noise in e-APDs for electron ionisation characterisation Duu Sheng Ong*, Ai Hui Tan, Xiao Jin and John P R David Published 16 December 2025 • © 2025 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved. Semiconductor Science and Technology, Volume 40, Number 12 Citation Duu Sheng Ong et al 2025 Semicond. Sci. Technol. 40 125011 DOI 10.1088/1361-6641/ae27ee Authors References Open science Article metrics 45 Total downloads Submit Submit to this Journal Permissions Get permission to re-use this article Share this article Article information Abstract Accurate modelling of electron-initiated avalanche photodiodes (e-APDs) requires a precise understanding of electron impact ionisation in semiconductors. This study examines the limitations of the conventional hard-threshold random path length (RPL) model and introduces a field-dependent RPL model, which uses a Weibull-Fréchet distribution to represent the spatial characteristics of ionisation. By fitting the measured gain and excess noise characteristics, this model enables direct extraction of the electron ionisation coefficient as a function of electric field, along with the spatial probability distribution of ionisation events. The model accurately reproduces experimental results for InAs and Hg07Cd03Te e-APDs, capturing soft-threshold ionisation behaviour and realistic dead space effects. The extracted ionisation coefficients differ significantly from those derived using traditional local models, highlighting the need to re-examine standard extraction methods. This framework offers a physically consistent approach for characterising impact ionisation in low-noise avalanche photodiodes and provides a valuable tool for designing advanced photodetectors.

Item Type:	Article
Uncontrolled Keywords:	Photodiodes
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics > TK8300-8360 Photoelectronic devices (General)
Divisions:	Faculty of Artificial Intelligence & Engineering (FAIE)
Depositing User:	Ms Rosnani Abd Wahab
Date Deposited:	07 Jan 2026 03:16
Last Modified:	07 Jan 2026 08:22
URII:	http://shdl.mmu.edu.my/id/eprint/15168

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