Items where Author is "David, John P R"
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Ong, Duu Sheng and Jin, Xiao and Yeoh, Keat Hoe and Tan, Ai Hui and Choo, Kan Yeep and David, John P R (2026) Modelling of electron and hole ionisation in Al x Ga1− x As0.56Sb0.44 alloys using Weibull–Fréchet distributions. Journal of Physics D: Applied Physics, 59 (2). 025103. ISSN 0022-3727
Ong, Duu Sheng and Tan, Ai Hui and Jin, Xiao and David, John P R (2025) Random path length analysis of gain and noise in e-APDs for electron ionisation characterisation. Semiconductor Science and Technology, 40 (12). p. 125011. ISSN 0268-1242