Citation
Vainshtein, Sergey and Yuferev, Valentin and Palankovski, Vassil and Ong, Duu-Sheng and Kostamovaara, Juha (2008) Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations. Applied Physics Letters, 92 (6). 062114. ISSN 00036951 Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.2870096
Abstract
Direct measurement of the electron velocity v(n) at an extreme electric field E is problematic due to impact ionization. The dependence v(n)(E) obtained by a Monte Carlo method can be verified, however, by comparing simulated and experimental data on superfast switching in a GaAs bipolar transistor structure, in which the switching transient is very sensitive to this dependence at high electric fields (up to 0.6 MV/cm). Such a comparison allows the conclusion to be made that the change from negative to positive differential mobility predicted earlier at E similar to 0.3 MV/cm should not happen until the electric field exceeds 0.6 MV/cm. (c) 2008 American Institute of Physics.
Item Type: | Article |
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Subjects: | T Technology > T Technology (General) Q Science > QC Physics |
Divisions: | Faculty of Engineering and Technology (FET) |
Depositing User: | Ms Suzilawati Abu Samah |
Date Deposited: | 13 Sep 2011 07:03 |
Last Modified: | 13 Sep 2011 07:03 |
URII: | http://shdl.mmu.edu.my/id/eprint/2766 |
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