Citation

Vainshtein, Sergey and Yuferev, Valentin and Palankovski, Vassil and Ong, Duu-Sheng and Kostamovaara, Juha (2008) Negative differential mobility in GaAs at ultrahigh fields: Comparison between an experiment and simulations. Applied Physics Letters, 92 (6). 062114. ISSN 00036951

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Abstract

Direct measurement of the electron velocity v(n) at an extreme electric field E is problematic due to impact ionization. The dependence v(n)(E) obtained by a Monte Carlo method can be verified, however, by comparing simulated and experimental data on superfast switching in a GaAs bipolar transistor structure, in which the switching transient is very sensitive to this dependence at high electric fields (up to 0.6 MV/cm). Such a comparison allows the conclusion to be made that the change from negative to positive differential mobility predicted earlier at E similar to 0.3 MV/cm should not happen until the electric field exceeds 0.6 MV/cm. (c) 2008 American Institute of Physics.

Item Type:	Article
Subjects:	T Technology > T Technology (General) Q Science > QC Physics
Divisions:	Faculty of Engineering and Technology (FET)
Depositing User:	Ms Suzilawati Abu Samah
Date Deposited:	13 Sep 2011 07:03
Last Modified:	13 Sep 2011 07:03
URII:	http://shdl.mmu.edu.my/id/eprint/2766

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