Citation

Cheang, Pei Ling and Wong, Eng Kiong and Teo, Lay Lian (2021) Avalanche Characteristics And Response Time In Gallium Nitride/Silicon Carbide Heterojunction Avalanche Photodiodes. In: 2nd FET PG Engineering Colloquium Proceedings 2021, 1-15 Dec. 2021, Online Conference. (Unpublished)

Text 39 Cheang Pei Ling_abstract.pdf Restricted to Repository staff only Download (78kB)

Abstract

Monte Carlo (MC) method is used to simulate the avalanche characteristics, including mean multiplication gain, excess noise factor with random ionization path length (RIPL) technique and response time with random ionization time (RIT) technique, in GaN/4H-SiC, 4H-SiC/GaN, with and without dead space, of multiplication width 0.05, 0.10, 0.20 and 0.30 µm.

Item Type:	Conference or Workshop Item (Paper)
Uncontrolled Keywords:	Monte Carlo simulation, avalanche photodiodes, multiplication gain, excess noise, response time
Subjects:	T Technology > T Technology (General)
Divisions:	Faculty of Engineering and Technology (FET)
Depositing User:	Ms Nurul Iqtiani Ahmad
Date Deposited:	28 Jan 2022 01:07
Last Modified:	28 Jan 2022 01:07
URII:	http://shdl.mmu.edu.my/id/eprint/9910

Downloads

Edit (login required)