Citation
Lee, Beng Gee (2004) Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer. Masters thesis, Multimedia University. Full text not available from this repository.
Official URL: http://myto.perpun.net.my/metoalogin/logina.php
Abstract
In this project, a computer simulation model has been developed to study the effect of annealing on the growth and dissolution of the void and oxide precipitation in Czochralski grown silicon wafer.
| Item Type: | Thesis (Masters) |
|---|---|
| Subjects: | Q Science > QD Chemistry |
| Divisions: | Faculty of Engineering (FOE) |
| Depositing User: | Ms Rosnani Abd Wahab |
| Date Deposited: | 14 Jul 2010 02:31 |
| Last Modified: | 14 Jul 2010 02:31 |
| URII: | http://shdl.mmu.edu.my/id/eprint/959 |
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