Citation

Islam, Md Shabiul and Wong, Hin Yong and Islam, Mohammad Tariqul and Dehzangi, Arash and Larki, Farhad (2019) Effect of lateral Gate Design on the Performance of Junctionless Lateral Gate Transistors. Electronics (Switzerland), 8 (5). ISSN 2079-9292

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Abstract

In this paper, we investigate the effect of lateral gate design on performance of a p-type double lateral gate junctionless transistors (DGJLTs) with an air gate gap. The impact of lateral gate length, which modifies the real channel length of the device and gate gap variation down to 50 nm which have been found to be the most influential factors in the performance of the device have been comprehensively investigated. The characteristics are demonstrated and compared with a nominal DGJLTs through three-dimensional technology computer-aided design (TCAD) simulation. At constant channel geometry (thickness and width), when the lateral gate length decreases, the results show constant flatband drain current characteristics while the OFF state current (IOFF) increases significantly. On the other hand, by decreasing the air gap the subthreshold current considerably decreases while the flatband current is constant. Moreover, at a certain gate gap, the gates lose control over the channel and the device simply works as a resistor. Electric field component, carriers’ density, band edge energies, and recombination rate of the carriers inside the channel in depletion and accumulation regimes are analysed to interpret the variation of output characteristics.

Item Type:	Article
Uncontrolled Keywords:	Double lateral gate, junctionless transistors (JLTs), lateral gate length, air gap
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics > TK7871 Electronics--Materials
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Suzilawati Abu Samah
Date Deposited:	09 Mar 2022 01:58
Last Modified:	09 Mar 2022 01:58
URII:	http://shdl.mmu.edu.my/id/eprint/9273

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