Citation

Yap, Seong Shan and Tou, Teck Yong and Kong, Kok Hong and Kek, Reeson (2019) Effects of the resistivity of AZO film on the IV and CV characteristics of AZO/p-Si heterojunction. Microelectronic Engineering, 213. pp. 24-30. ISSN 0167-9317

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Abstract

Al-doped ZnO (AZO) films with a range of resistivity were deposited on p-Si substrates in oxygen background by varying the laser fluence and substrate temperature using pulsed laser deposition. AZO films with roughness of 4.1–10.3 nm were deposited where the resistivity of the films range from 10−3 Ω cm to 10−1 Ω cm. Ohmic contacts were coated onto the AZO/p-Si heterojunctions to form Au/AZO/p-Si/Al structures and the samples were characterized using I-V and Csingle bondV measurements. The samples with high resistivity AZO film (~ 10−1 Ω cm) deposited at room temperature exhibited MOS-like characteristics and AZO/p-Si heterojunction with low resistivity AZO films (~ 10−3 Ω cm) deposited at 100 °C to 300 °C showed p-n junction characteristics. Based on the junction formed, the barrier potential, depletion width, depletion capacitance and oxide thickness were deduced. The Csingle bondV characteristics of the high resistivity samples deposited at room temperature were also shown to be affected by the presence of interface states within the junction.

Item Type:	Article
Uncontrolled Keywords:	Al-doped Zinc Oxide (AZO), Pulsed laser deposition (PLD), Heterojunction Capacitance-voltage (CeV), characteristics Interface states Metal-oxide-semiconductor (MOS) p-n junction
Subjects:	T Technology > TP Chemical technology > TP934-945 Paints, pigments, varnishes, etc.
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Suzilawati Abu Samah
Date Deposited:	07 Mar 2022 01:29
Last Modified:	07 Mar 2022 01:29
URII:	http://shdl.mmu.edu.my/id/eprint/9212

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