Citation

Yeoh, Keat Hoe and Chew, Khian Hooi and Yoon, Tiem Leong and Ong, Duu Sheng and Rusi, Rusi (2021) Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MgAN (M = Al, Si, P and S): A first-principles study. AIP Conference Proceedings, 2332 (1). ISSN 1551-7616

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Abstract

Ab initio calculations within the density-functional theory (DFT) are carried out to investigate the electronics and magnetic properties of the p-block elements doped two-dimensional GaN (2D GaN). We have selected Al, Si, P and S dopants as the representative for Group III, IV, V and VI elements, respectively. Depending on the type of dopant and substitution site, the semiconducting characteristic of the 2D GaN can be changed into metallic. Similarly, magnetism can be induced on the 2D GaN with the total magnetization varied from 0.5 µB to 1.46 µB.

Item Type:	Article
Uncontrolled Keywords:	Gallium nitride
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics > TK7871 Electronics--Materials
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Nurul Iqtiani Ahmad
Date Deposited:	21 Apr 2021 17:49
Last Modified:	21 Apr 2021 17:49
URII:	http://shdl.mmu.edu.my/id/eprint/8615

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