Citation

Chan, Kah Yoong and Ng, Zi Neng and Au, Benedict Wen Cheun and Knipp, Dietmar (2018) Visibly transparent metal oxide diodes prepared by solution processing. Optical Materials, 75. pp. 595-600. ISSN 0925-3467

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Abstract

Visibly transparent metal oxide diodes were fabricated using p-type doped zinc oxide on tin doped indium oxide coated substrates by sol-gel solution processing. The influence of various nitrogen doping concentration on the hole carrier concentration and the device operation of the diodes was investigated. The diodes exhibit high optical transmission in the visible spectra and high on/off ratios at low operating voltages. The operation is limited by the low hole carrier concentration, which affects the ideality factor and the series resistance of the diode. The influence of the carrier concentration on electronic properties of the diode will be discussed.

Item Type:	Article
Uncontrolled Keywords:	Transparent electronics, Zinc oxide, Sol-gel
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Rosnani Abd Wahab
Date Deposited:	30 Nov 2020 10:03
Last Modified:	30 Nov 2020 10:03
URII:	http://shdl.mmu.edu.my/id/eprint/7502

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