Theoretical Analysis of Double Heterojunction Bipolar Transistors With Composite Collectors.

Citation

Goh, Yu Ling (2003) Theoretical Analysis of Double Heterojunction Bipolar Transistors With Composite Collectors. Masters thesis, Multimedia University.

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Abstract

A theoretical investigation of the DC current-voltage (I-V) characteristics and avalanche multiplication in GaInP GaAs composite collector double heterojunction bipolar transistor (DHBTs) was performed using a physical one-dimensional analytical model developed based on the Ebers-Moll methodology. The concept of carrier transmission, reclection and tunneling at the potential barrier at the heterojunction was expounded in the analytical model.

Item Type: Thesis (Masters)
Subjects: L Education > LB Theory and practice of education > LB2300 Higher Education
Divisions: Faculty of Engineering (FOE)
Depositing User: Mr Shaharom Nizam Mohamed
Date Deposited: 04 Dec 2009 07:40
Last Modified: 04 Dec 2009 11:25
URII: http://shdl.mmu.edu.my/id/eprint/75

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