Citation

Lee, Lini and Azwan, Erman and Krishnamurthy, Saranya and Kannan, Ramani (2018) Study the Effects of Photon Radiation on Power MOSFET for Harsh Environment Application. MATEC Web of Conferences, 225. pp. 1-6. ISSN 2261-236X

Text matecconf_ses2018_05013.pdf - Published Version Restricted to Repository staff only Download (312kB)

Abstract

The rapid growth of the advanced technologies in power electronics system gives a challenge to the electronic device to sustain with the modern technologies nowadays. The challenges are also including the place where the system was installed for example the application in the harsh environment. Harsh environment application requires an electronic device deals with radiation pollution. Hence, the electronic device will suffer from this phenomenon and make the whole system to malfunction and break down. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is one type of electronic device that is the most broadly for high voltage and high switching speed application. The aim of this paper is to studies the photon radiation effect toward the Power MOSFET performance. The study focus on the changing of the electrical characteristics of the device after radiated with photon radiation. Process simulation and Device simulation tools in Sentaurus Synopsys Software used for the research to validate all the theory.

Item Type:	Article
Uncontrolled Keywords:	Photon Radiation
Subjects:	Q Science > QC Physics > QC770-798 Nuclear and particle physics. Atomic energy. Radioactivity > QC793-793.5 Elementary particle physics
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Suzilawati Abu Samah
Date Deposited:	21 Feb 2021 23:44
Last Modified:	21 Feb 2021 23:56
URII:	http://shdl.mmu.edu.my/id/eprint/7359

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