Citation

Ilamaran, Shiva Ghandi Isma and Yusoff, Zubaida and Sampe, Jahariah (2018) 0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design. International Journal of Electrical and Computer Engineering (IJECE), 8 (3). p. 1837. ISSN 2088-8708

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Abstract

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.

Item Type:	Article
Uncontrolled Keywords:	Power amplifiers, GaN, RF power amplifier, Wideband
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics > TK7871 Electronics--Materials
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Rosnani Abd Wahab
Date Deposited:	10 Nov 2020 16:08
Last Modified:	10 Jan 2023 01:54
URII:	http://shdl.mmu.edu.my/id/eprint/7301

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