Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer

Citation

Koh, Song Foo (2014) Electric-field enhanced diffusion and polysilicon gettering of copper and iron in silicon wafer. PhD thesis, Multimedia University.

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Abstract

Copper (Cu) and iron (Fe) impurities in the silicon bulk of highly borondoped silicon wafers were investigated using the Dynamic Secondary Ion Mass Spectrometry (D-SIMS). Competition between segregation at the highly boron-doped and polysilicon layer was observed. Enhanced gettering into polysilicon layer after subjecting to a combined effect of isothermal annealing and electric field (40 kV/cm) was attributed to the thermally induced dissociations of Cu and Fe complexes and field-enhanced directional drift of positive Cu and Fe interstitials (CuI) towards the polysilicon sink.

Item Type: Thesis (PhD)
Additional Information: Call No.: TK7871.85 K64 2014
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Nurul Iqtiani Ahmad
Date Deposited: 11 Sep 2014 06:42
Last Modified: 11 Sep 2014 06:42
URII: http://shdl.mmu.edu.my/id/eprint/5728

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