Citation
Hoon, Jian Wei and Chan, Kah Yoong and Low, Cheng Yang (2014) Fabrication and characterization of RF magnetron sputtered silicon oxide films. Advanced Materials Research, 970. pp. 102-105. ISSN 1662-8985 Full text not available from this repository.
Official URL: http://www.scientific.net/AMR.970.102
Abstract
In this work, silicon dioxide (SiO2) films were fabricated on indium tin oxide (ITO) coated glass substrates by radio frequency (RF) magnetron sputtering deposition technique. The deposition rate of the magnetron sputtered SiO2 films was investigated. The SiO2 films were characterized with the atomic force microscopy (AFM) for their surface topology. In addition, the electrical insulating strength of the magnetron sputtered SiO2 was examined.
| Item Type: | Article |
|---|---|
| Additional Information: | Chapter 6: Electronic and Electronic Packaging |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Faculty of Engineering (FOE) |
| Depositing User: | Ms Nurul Iqtiani Ahmad |
| Date Deposited: | 21 Aug 2014 09:29 |
| Last Modified: | 21 Aug 2014 09:30 |
| URII: | http://shdl.mmu.edu.my/id/eprint/5689 |
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