Citation

Chan, K.Y. (2009) Electron Devices; Research from Multimedia University provide new insights into electron devices. Technology Business Journal . p. 109.

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Abstract

Microcrystalline-silicon TFTs prepared at low temperatures (150 degrees C-200 degrees C) have recently gained much attention as potential elements for such applications due to their high charge carrier mobilities exceeding 10 cm(2)/V. s. Understanding the relationship between structural properties and charge transport is the key in realizing transistors with high charge carrier mobility at low temperatures, scientists in Malaysia report.

Item Type:	Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Suzilawati Abu Samah
Date Deposited:	24 Sep 2013 01:14
Last Modified:	24 Sep 2013 01:14
URII:	http://shdl.mmu.edu.my/id/eprint/4107

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