Citation

Hoon, Jian-Wei and Chan, Kah-Yoong and Krishnasamy, Jegenathan and Tou, Teck-Yong (2011) Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique. In: 5. Zinc Oxide Thin Films Fabricated with Direct Current Magnetron Sputtering Deposition Technique, 27–30 October 2010 , Damai Laut, Malaysia.

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Abstract

Zinc oxide (ZnO) is a very promising material for emerging large area electronic applications including thin‐film sensors, transistors and solar cells. We fabricated ZnO thin films by employing direct current (DC) magnetron sputtering deposition technique. ZnO films with different thicknesses ranging from 100 nm to 1020 nm were deposited on silicon (Si) substrate. The deposition pressure was varied from 12 mTorr to 25 mTorr. The influences of the film thickness and the deposition pressure on structural properties of the ZnO films were investigated using Mahr surface profilometer and atomic force microscopy (AFM). The experimental results reveal that the film thickness and the deposition pressure play significant role in the structural formation of the deposited ZnO thin films. ZnO films deposited on Si substrates are promising for variety of thin‐film sensor applications.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Suzilawati Abu Samah
Date Deposited:	03 Sep 2013 02:46
Last Modified:	03 Sep 2013 02:46
URII:	http://shdl.mmu.edu.my/id/eprint/3917

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