Citation
Lee, W. P. and Yow, H. K. and Tou, T. Y. (2004) Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers. Electrochemical and Solid-State Letters, 7 (11). G282-G285. ISSN 10990062 Full text not available from this repository.
Official URL: http://dx.doi.org/10.1149/1.1808093
Abstract
Surface analyses by atomic force microscopy and field-emission scanning electron microscopy have revealed new shape of truncated voids, commonly known as crystal-originated-particles (COPs), that appear as kite-shaped pits with two (111) planes and two non-(111) planes in twin and triplet clusters, when viewed from the surface plane of nitrogen-doped Czochralski (CZ)-grown silicon (100) wafers. Also, the detection of higher number density but smaller size for these COPs indicates that the presence of nitrogen during CZ-growth of silicon crystals has strong influence on the size and density of COPs. (C) 2004 The Electrochemical Society.
| Item Type: | Article |
|---|---|
| Subjects: | Q Science > Q Science (General) |
| Divisions: | Faculty of Engineering (FOE) |
| Depositing User: | Ms Rosnani Abd Wahab |
| Date Deposited: | 22 Aug 2011 02:28 |
| Last Modified: | 22 Aug 2011 02:28 |
| URII: | http://shdl.mmu.edu.my/id/eprint/2493 |
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