Citation

Balachandran, R and Yow, HK and Manickam, RM and Saaminathan, V (2006) Simulated Dielectric Characteristics of Pt/BST/Ni-Fe/Cu Multilayer Capacitor Stack for Storage Application. In: Simulated dielectric characteristics of Pt/BST/Ni-Fe/Cu multilayer capacitor stack for storage application.

Full text not available from this repository.

Abstract

In this simulation research work, the metal-composite-metal (MCM) multilayer capacitor structure [Pt/BST/Ni-Fe/Cu] is proposed with Barium Strontium Titanate (BST) oxide material as the capacitor dielectric material for DRAM with permalloy Nickel-Ferrous (Ni-Fe) coated Copper (Cu) as the bottom conducting electrode and platinum as the top conducting electrode. This proposed MCM consists of 120 pin Cu bottom contact material, a I pm of Ni-Fe alloy over the stoichiometric composition of the BST oxide dielectric material of thickness 40 nm and dielectric constant of 775. The MCM structure is expected to deliver a maximum charge storage capacity of 109.75 fF for a capacitor in DRAM cell area of 0.64 mu m(2) well above the minimum requirement for DRAM cell. The leakage current density for a variation of voltage from 0 to 10 V has been simulated for temperature variation. When compared with the previous report, the proposed multi layer capacitor (MLC) structure shows promising potentials in terms of dielectric characteristics.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Rosnani Abd Wahab
Date Deposited:	10 Aug 2011 06:30
Last Modified:	10 Aug 2011 06:30
URII:	http://shdl.mmu.edu.my/id/eprint/2051

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