Citation

Ong, Duu Sheng and Jin, Xiao and Yeoh, Keat Hoe and Tan, Ai Hui and Choo, Kan Yeep and David, John P R (2026) Modelling of electron and hole ionisation in Al x Ga1− x As0.56Sb0.44 alloys using Weibull–Fréchet distributions. Journal of Physics D: Applied Physics, 59 (2). 025103. ISSN 0022-3727

Text Modelling of electron and hole ionisation in AlxGa1−xAs0.56Sb0.44 alloys using Weibull–Fréchet distributions - IOPscience.pdf - Published Version Restricted to Repository staff only Download (731kB)

Abstract

IOP Science home Accessibility Help Journals Books Publishing Support Login Journal of Physics D: Applied Physics Purpose-Led Publishing, find out more. Paper Modelling of electron and hole ionisation in AlxGa1−xAs0.56Sb0.44 alloys using Weibull–Fréchet distributions Duu Sheng Ong*, Xiao Jin, Keat Hoe Yeoh, Ai Hui Tan, Kan Yeep Choo and John P R David Published 30 December 2025 • © 2025 IOP Publishing Ltd. All rights, including for text and data mining, AI training, and similar technologies, are reserved. Journal of Physics D: Applied Physics, Volume 59, Number 2 Citation Duu Sheng Ong et al 2026 J. Phys. D: Appl. Phys. 59 025103 DOI 10.1088/1361-6463/ae2ca0 Authors References Open science Article metrics 80 Total downloads Submit Submit to this Journal Permissions Get permission to re-use this article Share this article Article information Abstract Accurately modelling of the exceptional low excess noise observed in AlxGa1−xAs0.56Sb0.44 avalanche photodiodes (APDs) is crucial for optimising device performance. In this study, the random path length model, incorporating the Weibull–Fréchet distribution function, was used to simulate electron and hole impact ionisation in APDs with non-uniform electric fields. The model successfully reproduces the experimentally measured multiplication gain, and excess noise factor, , in electron-initiated APDs with compositions Al0.55Ga0.45As0.56Sb0.44, Al0.75Ga0.25As0.56Sb0.44, Al0.85Ga0.15As0.56Sb0.44, and AlAs0.56Sb0.44, while also predicting a steep increase in for hole-initiated APDs. The results demonstrate that ionisation path length distributions are strongly influenced by electric field strength and alloy composition. The model effectively captures the probability density function of ionisation path lengths, which is responsible for low excess noise. The results reveal that electron dead space increases as Al composition decreases, exhibiting an inverse trend compared to the reducing mean ionisation path length in these alloys. This behaviour is attributed to the alloy scattering effects, which become more pronounced in mid-composition alloys.

Item Type:	Article
Uncontrolled Keywords:	Electron
Subjects:	Q Science > QD Chemistry > QD146-197 Inorganic chemistry
Divisions:	Faculty of Artificial Intelligence & Engineering (FAIE)
Depositing User:	Ms Rosnani Abd Wahab
Date Deposited:	02 Mar 2026 00:45
Last Modified:	02 Mar 2026 00:45
URII:	http://shdl.mmu.edu.my/id/eprint/15383

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