Next-generation lead-free solar cells with MASnBr3/ZnSnN2 dual absorbers for high efficiency

Citation

Hasan Tanim, Md. Mehedi and Siddika, Mst. Aysha and Ali, Md. Feroz and Sheikh, Md. Rafiqul Islam and Al Mamun, Abdullah Sarwar and Hossen, Md. Jakir (2025) Next-generation lead-free solar cells with MASnBr3/ZnSnN2 dual absorbers for high efficiency. Frontiers in Materials, 12. ISSN 2296-8016

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Abstract

This study presents a next-generation lead-free perovskite solar cell (PVSC) architecture employing a dual-absorber design using MASnBr3 and ZnSnN2 to enhance photovoltaic performance while ensuring environmental sustainability. The proposed structure—FTO/n-ZnO/p-MASnBr3/p-+ZnSnN2/p-++CNTS/Au—was simulated and optimized using SCAPS-1D software. Extensive material and structural optimization was conducted, including selection of electron and hole transport layers as well as tuning absorber thickness, doping concentration, and defect density. The dual-absorber configuration leverages the complementary optical properties of MASnBr3 (bandgap: 1.3 eV) and ZnSnN2 (bandgap: 1.5 eV), enhancing spectral absorption and carrier separation. Optimization of interface properties, series/shunt resistance, and operating temperature further improved the device’s efficiency and stability. The final optimized structure achieved a power conversion efficiency (PCE) of 35.87%, with open-circuit voltage (VOC) of 1.17 V, short-circuit current density (JSC) of 34.39 mA/cm2, and fill factor (FF) of 89.01%. Quantum efficiency analysis confirmed near-unity photon-to-charge conversion across the visible spectrum. This work demonstrates the viability of combining lead-free perovskites with nitride absorbers for high-efficiency, eco-friendly solar technologies and provides a scalable pathway for future experimental validation and commercialization of sustainable photovoltaic systems.

Item Type: Article
Uncontrolled Keywords: Lead-free perovskite solar cells, dual absorber architecture, MASnBr3, ZnSnN2, SCAPS1D simulation
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions: Faculty of Engineering and Technology (FET)
Depositing User: Ms Suzilawati Abu Samah
Date Deposited: 30 Sep 2025 07:14
Last Modified: 06 Oct 2025 01:50
URII: http://shdl.mmu.edu.my/id/eprint/14591

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