Citation

Thien, Gregory Soon How and Azlan Razif, Azfar Razif and Ebrahem Abdelhamed, Abdelrahman Hamed and Lee, Chu Liang and Lee, Lini and Pang, Wai Leong and Sivaramakrishna, Akella and Thamankar, Ramesh and Rajasekar, Natarajan and Chan, Kah Yoong (2024) A carbon electrode approach for TiO2-write-once-read-many resistive memories. Materials Science in Semiconductor Processing, 184. p. 108839. ISSN 1369-8001

Text A carbon electrode approach for TiO2-write-once-read-many resistive memories.pdf - Published Version Restricted to Repository staff only Download (3MB)

Abstract

Nanomaterials are a potential alternative to conventional random resistive access memory (ReRAM) in nonvolatile memory (NVM) due to their unique electrical and physical properties. Nevertheless, obtaining a specific NVM characteristic [particularly Write-Once-Read-Many (WORM)] using carbon-based electrodes necessitates further assessment. This study proposed a reinvented methodology for TiO2-based devices to produce WORM memory behavior using the doctor blade method. A carbon/graphite counter electrode (Gr/Cb) was fabricated and characterized for TiO2-based resistive switching devices. Consequently, the Gr/Cb electrode device quickly transitioned from a high to low resistance state, suggesting WORM memory behavior. Approximately 66.7 % improvement (~1.8 V–~0.6 V) was observed in the required applied voltage when the active area was reduced, indicating lower power consumption. Overall, this study provided evidence of the approach’s feasibility in practical applications, demonstrating lower costs and simplicity. The structure also highlighted the importance of understanding the WORM behavior for effectively utilizing carbon-based electrodes in non-volatile memories.

Item Type:	Article
Uncontrolled Keywords:	Electrode
Subjects:	Q Science > QD Chemistry > QD450-801 Physical and theoretical chemistry
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Nurul Iqtiani Ahmad
Date Deposited:	01 Oct 2024 01:15
Last Modified:	01 Oct 2024 01:15
URII:	http://shdl.mmu.edu.my/id/eprint/12998

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