Citation
Wong, Man On (2006) Study Of MSQ As Low-K Dielectric Material For Semiconductor Devices. Masters thesis, Multimedia University. Full text not available from this repository.
Official URL: http://myto.perpun.net.my/metoalogin/logina.php
Abstract
High spped performance in VLSI devices requires the use of semiconductor materials such as copper interconnects and low-k dielectric. Low-k dielectric can reduce the parasitic capacitance between two metal lines, which allows higher operational speed as compared to silicon oxide.
| Item Type: | Thesis (Masters) |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics |
| Divisions: | Faculty of Engineering (FOE) |
| Depositing User: | Ms Rosnani Abd Wahab |
| Date Deposited: | 23 Aug 2010 03:47 |
| Last Modified: | 23 Aug 2010 03:47 |
| URII: | http://shdl.mmu.edu.my/id/eprint/1124 |
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