Citation
Lock, Choon Hou (2006) Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors. Masters thesis, Multimedia University. Full text not available from this repository.
Official URL: http://myto.perpun.net.my/metoalogin/logina.php
Abstract
Theoretical study of the DC current-voltage (I-V) characteristics of Silicon Metal-Oxide-Semiconductor (MOS) transistors with and without the lightly doped drain (LDD) structure were performed using one-dimensional analytical models including short channel effect.
| Item Type: | Thesis (Masters) |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics |
| Divisions: | Faculty of Engineering (FOE) |
| Depositing User: | Ms Rosnani Abd Wahab |
| Date Deposited: | 23 Aug 2010 03:55 |
| Last Modified: | 23 Aug 2010 03:55 |
| URII: | http://shdl.mmu.edu.my/id/eprint/1113 |
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