Citation

Thien, Gregory Soon How and Mohd Sarjidan, Mohd Arif and Talik, Noor Azrina and Goh, Boon Tong and Yap, Boon Kar and He, Zhicai and Chan, Kah Yoong (2022) Electrode dependence in halide perovskite memories: resistive switching behaviours. Materials Chemistry Frontiers. ISSN 2052-1537

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Abstract

Halide perovskites (HPs) are widely employed in a variety of applications including optoelectronics, lasers, light-emitting diodes, and photovoltaics. As HPs are superb semiconductors with remarkable electronic and light absorption characteristics, global research into these materials is flourishing in various industries. Thus, memory devices have lately seen a growth in the usage of HPs as a next-generation candidate for high-performance memories. Nonetheless, understanding the impact of design structure on HP memories, such as electrode dependence in producing different resistive switching (RS) properties, is critical in optimizing the design process. This review describes the top electrode (TE) dependence of various materials in creating diverse RS memory behaviour. The disparities in all recently reported RS characteristics based on different TE materials are addressed and explored. Current electrode modification advances and techniques in HP RS devices are also discussed. Through this, the relevance and importance of electrode dependence in the design architecture of HP memories toward RS mechanisms are highlighted in this review work.

Item Type:	Article
Uncontrolled Keywords:	Electrode
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK1001-1841 Production of electric energy or power. Powerplants. Central stations
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Nurul Iqtiani Ahmad
Date Deposited:	12 Oct 2022 01:08
Last Modified:	12 Oct 2022 01:08
URII:	http://shdl.mmu.edu.my/id/eprint/10545

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