Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer

Lee, Beng Gee (2004) Computer Simulations Of Void And Oxide Precipitate In Hydrogen-Annealed Silicon Wafer. Masters thesis, Multimedia University.

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Abstract

In this project, a computer simulation model has been developed to study the effect of annealing on the growth and dissolution of the void and oxide precipitation in Czochralski grown silicon wafer.

Item Type: Thesis (Masters)
Subjects: Q Science > QD Chemistry
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 14 Jul 2010 02:31
Last Modified: 14 Jul 2010 02:31
URI: http://shdl.mmu.edu.my/id/eprint/959

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