Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors

Lock, Choon Hou (2006) Applicability Of Analytical Model For Modeling Silicon And Silicon Carbide MOS Transistors. Masters thesis, Multimedia University.

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Abstract

Theoretical study of the DC current-voltage (I-V) characteristics of Silicon Metal-Oxide-Semiconductor (MOS) transistors with and without the lightly doped drain (LDD) structure were performed using one-dimensional analytical models including short channel effect.

Item Type: Thesis (Masters)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 23 Aug 2010 03:55
Last Modified: 23 Aug 2010 03:55
URI: http://shdl.mmu.edu.my/id/eprint/1113

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