Items where Author is "Ong, D. S."

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Number of items: 19.

Mohd Yasin, Faisal and Nagel, David J. and Ong, D. S. and Korman, Can E. and Chuah, Hean Teik (2008) Low Frequency Noise Measurement and Analysis of Capacitive Micro-Accelerometers: Temperature Effect. Japanese Journal of Applied Physics, 47 (6). pp. 5270-5273. ISSN 1347-4065, 0021-4922

Ong, D. S. and Hartnagel, H. L. (2008) Enhanced THz frequency multiplier efficiency by quasi-ballistic electron reflection in double-heterojunction structures. EPL (Europhysics Letters), 81 (4). p. 48004. ISSN 0295-5075

Mohd-Yasin, F. and Nagel, D. J. and Korman, C. E. and Ong, D. S. and Chuah, H. T. (2007) Low frequency noise measurement of three-axis surface micro-machined silicon capacitive accelerometer. In: International Semiconductor Device Research Symposium, 12-14 DEC 2007, College Pk, MD.

Mohd Yasin, Faisal and Nagel, David J. and Ong, D. S. and Korman, Can E. and Chuah, Hean Teik (2007) Low frequency noise measurement and analysis of capacitive micro-accelerometers: Temperature effect. In: 2007 Digest of papers Microprocesses and Nanotechnology, 05-08 Nov 2007, Kyoto, Japan.

Tan, S. L. and Ong, D. S. and Yow, H. K. (2007) Theoretical analysis of breakdown probabilities and jitter in single-photon avalanche diodes. Journal of Applied Physics, 102 (4). 044506. ISSN 00218979

Tan, S. L. and Ong, D. S. and Yow, H. K. (2007) Advantages of thin single-photon avalanche diodes. physica status solidi (a), 204 (7). pp. 2495-2499. ISSN 18626300

Poh, Z. S. and Yow, H. K. and Ong, D. S. and Houston, P. A. and Krysa, A. B. (2007) Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors. Journal of Applied Physics, 101 (8). 086111. ISSN 00218979

Poh, Z. S. and Yow, H. K. and Ong, D. S. and Houston, P. A. and Krysa, A. B. (2007) Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors. Journal of Applied Physics, 101 (8). 086111. ISSN 00218979

Poh, Z. S. and Yow, H. K. and Houston, P. A. and Krysa, A. B. and Ong, D. S. (2006) GaInP∕GaAs double heterojunction bipolar transistor with GaAs∕Al[sub 0.11]Ga[sub 0.89]As∕GaInP composite collector. Journal of Applied Physics, 100 (2). 026105. ISSN 00218979

Choo, K. Y. and Ong, D. S. (2005) Positive and negative temperature dependences of electron-impact ionization in In[sub 0.53]Ga[sub 0.47]As. Journal of Applied Physics, 98 (2). 023714. ISSN 00218979

Choo, K. Y. and Ong, D. S. (2005) Positive and negative temperature dependences of electron-impact ionization in In[sub 0.53]Ga[sub 0.47]As. Journal of Applied Physics, 98 (2). 023714. ISSN 00218979

Choo, K. Y. and Ong, D. S. (2004) Analytical band Monte Carlo simulation of electron impact ionization in In[sub 0.53]Ga[sub 0.47]As. Journal of Applied Physics, 96 (10). pp. 5649-5653. ISSN 00218979

You, A. H. and Ong, D. S. (2004) Random response time of thin avalanche photodiodes. Optical and Quantum Electronics, 36 (13). pp. 1155-1166. ISSN 0306-8919

Goh, Y. L. and Ong, D. S. and Yow, H. K. (2004) An analytical study of current-voltage characteristics and breakdown performance of GaInP∕GaAs composite collector double heterojunction bipolar transistor. Journal of Applied Physics, 96 (8). pp. 4514-4517. ISSN 00218979

Goh, Y. L. and Ong, D. S. and Yow, H. K. (2004) An analytical study of current-voltage characteristics and breakdown performance of GaInP∕GaAs composite collector double heterojunction bipolar transistor. Journal of Applied Physics, 96 (8). p. 4514. ISSN 00218979

Ong, D. S. and Rees, G. J. and David, J. P. R. (2003) Avalanche speed in thin avalanche photodiodes. Journal of Applied Physics, 93 (7). pp. 4232-4239. ISSN 00218979

Ong, D. S. and Rees, G. J. and David, J. P. R. (2003) Avalanche speed in thin avalanche photodiodes. Journal of Applied Physics, 93 (7). p. 4232. ISSN 00218979

Ong, D. S. and Li, K. F. and Plimmer, S. A. and Rees, G. J. and David, J. P. R. and Robson, P. N. (2000) Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes. Journal of Applied Physics, 87 (11). pp. 7885-7891. ISSN 00218979

Ong, D. S. and Li, K. F. and Plimmer, S. A. and Rees, G. J. and David, J. P. R. and Robson, P. N. (2000) Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p[sup +]-i-n[sup +] diodes. Journal of Applied Physics, 87 (11). p. 7885. ISSN 00218979

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