Citation

Singh, Ajay Kumar and Tan, Chun Fui (2021) Dual Metal Triple-gate-dielectric (DM_TGD) Tunnel Field Effect Transistor: A Novel Structure for Future Energy Efficient Device. Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering), 14 (6). pp. 683-693. ISSN 2352-0965

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Abstract

Background: Power reduction is a serious design concern for submicron logic circuits, which can be achieved by scaling the supply voltage. Modern Field Effect Transistor (FET) circuits require at least 60 mV of gate voltage for better current drive at room temperature. The tunnel Field Effect Transistor (TFET) is a leading future device due to its steep subthreshold swing (SS), which makes its ideal device at low power supply. Steep switching TFET can extend the supply voltage scaling with improved energy efficiency for both digital and analog applications. These devices suffer from large ambipolar current, which cannot be reduced using Dual Metal Gate (DMG) alone. Gate dielectric materials play a key role in suppressing the ambipolar current. Objective: This paper presents a new structure known as triple-gate-dielectric (DM_TGD) TFET, which combines the dielectric and work function engineering to solve these problems.

Item Type:	Article
Uncontrolled Keywords:	Dual metal gate, dielectric material, TFET, hetero-dielectric gate, ambipolar current, tunnel current.
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions:	Faculty of Information Science and Technology (FIST)
Depositing User:	Ms Nurul Iqtiani Ahmad
Date Deposited:	26 Nov 2021 13:15
Last Modified:	26 Nov 2021 13:15
URII:	http://shdl.mmu.edu.my/id/eprint/9774

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