Lead Electromigration In Flip Chip Packaging Under Hast Environment

Citation

Wong, Shaw Hwang (2004) Lead Electromigration In Flip Chip Packaging Under Hast Environment. Masters thesis, Multimedia University.

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Abstract

Failure under HAST condition will cause device malfunction. Lead migration can occur under HAST stress when two signals are biased. Lead migrates from solder bump to the adjacent copper trace in substrate causing electrical failure. The focus of this project is on the failure mechanism of the lead migration to understand how the lead migrates from bump.

Item Type: Thesis (Masters)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 13 Jul 2010 03:08
Last Modified: 13 Jul 2010 03:08
URII: http://shdl.mmu.edu.my/id/eprint/941

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