Citation

Ramasamy, Gobbi and Zaman, Mukter and Selvan, Saravana and Umayal, Umayal and Suen, Wei (2019) A novel dual electrode and gate engineered doping-less TFET for performance enhancement. ARPN Journal of Engineering and Applied Sciences, 14 (4). pp. 814-821. ISSN 1819-6608

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Abstract

Tunnel FET (TFET) is a promising device for ultra-low power applications because it has the benefits of band to band tunneling (BTBT) behavior of operating mechanism and achieving the sub-threshold swing (SS) value of less than 60mV/dec. However, it suffers from low ON state current and ambipolar in nature. In addition, it also has poor analog/RF performances. To address these problems, a novel dual electrode and a double metal gate Doping-less TFET (DEDMGDLTFET) is proposed in this work by using charge plasma technique. To improve the BTBT rate and ON-state current, a tunneling gate length (Ltg) of proper work function is created at the source-channel junction. The distance between the source and gate electrode (Lgs) is kept at a minimum of 2 nm significantly, to reduce the ambipolar behavior. To enhance the analog/RF performance, a dual electrode structure is proposed on both sides of source and drain regions to induce the carriers uniformly. By using Silvaco TCAD simulator, different n-type DLTFET structures are designed and compared. The overall DC and analog/RF performance of all the DLTFETs are investigated. The proposed DEDMGDLTFET achieved a higher ON current of5.26 x 10-7 A/µm at Vgs and Vds =0.5 V, SS of 30.27 mV/dec, Cut-off frequency range from MHZ to GHz and suppress the ambipolar order of 1010 effectively.

Item Type:	Article
Uncontrolled Keywords:	Tunnel FET, band to band tunneling, sub-threshold swing, doping-less charge plasma.
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) > TA800-820 Tunneling. Tunnels
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Suzilawati Abu Samah
Date Deposited:	15 Feb 2022 02:44
Last Modified:	15 Feb 2022 02:44
URII:	http://shdl.mmu.edu.my/id/eprint/9142

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