High Field Carrier Transport Properties of Al0.45Ga0.55N


Cheang, Pei Ling and You, Ah Heng and Chan, Yee Kit and Ooi, Wesley Tat Lung (2020) High Field Carrier Transport Properties of Al0.45Ga0.55N. Malaysian Journal of Fundamental and Applied Sciences, 16 (5). pp. 519-523. ISSN 2289-5981, 2289-599X

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This work presented Monte Carlo (MC) simulation of Al0.45Ga0.55N to investigate the carrier transport properties in the high electric field region including impact ionization. The simulation investigates both electron and hole considering two non-parabolic conduction band and valence band respectively. The carriers’ drift velocity, energy and occupancy are simulated with respect to electric field at room temperature. The electron drift velocity peak at 2.70 × 107 cm/s with the electric field of 240 kV/cm. The electron starts to excite to higher valley at 170 kV/cm and has a spike in energy at 700 kV/cm due to the occurrence of impact ionization. The impact ionization rates are computed using modified Keldysh equation and it is shown that hole impact ionization rate is higher than that of electron for Al0.45Ga0.55N. This work also presents the impact ionization coefficient with hole dominating the impact ionization process above the electric field of 2.6 MV/cm.

Item Type: Article
Uncontrolled Keywords: Avalanche photodiode
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics > TK8300-8360 Photoelectronic devices (General)
Divisions: Faculty of Engineering and Technology (FET)
Depositing User: Ms Suzilawati Abu Samah
Date Deposited: 22 Oct 2021 02:15
Last Modified: 22 Oct 2021 02:15
URII: http://shdl.mmu.edu.my/id/eprint/8319


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