Citation

Sirkeli, Vadim P and Yilmazoglu, Oktay and Al-Daffaie, Shihab and Oprea, Ion and Ong, Duu Sheng and Küppers, Franko and Hartnagel, Hans L (2016) Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier. Journal of Physics D: Applied Physics, 50 (3). 035108. ISSN 0022-3727

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Abstract

Blue InGaN/GaN light-emitting diodes with undoped, heavily Si-doped, Si delta-doped, heavily Mg-doped, Mg delta-doped, and Mg–Si pin-doped GaN barrier are investigated numerically. The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field between the InGaN well and the GaN barrier in the multiple quantum well, suppresses the quantum-confined Stark effect, and enhances the hole injection and electron confinement in the active region. For this light-emitting diode (LED) device structure, we found that the turn-on voltage is 2.8 V, peak light emission is at 415.3 nm, and internal quantum efficiency is 85.9% at 100 A cm−2. It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and lower efficiency droop up to 400 A cm−2 compared with LED device structures with undoped or Si(Mg)-doped GaN barrier.

Item Type:	Article
Uncontrolled Keywords:	Diodes
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics > TK7871 Electronics--Materials
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Suzilawati Abu Samah
Date Deposited:	24 Jul 2020 07:31
Last Modified:	24 Jul 2020 07:31
URII:	http://shdl.mmu.edu.my/id/eprint/6970

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