Plasma characteristics of 355nm and 532nm laser deposition of Al-doped ZnO films


Kek, Reeson and Lee, Boon Kiat and Nee, Chen Hon and Tou, Teck Yong and Yap, Seong Ling and Arof, Abdul Kariem Bin Hj Mohd and Yap, Seong Shan (2016) Plasma characteristics of 355nm and 532nm laser deposition of Al-doped ZnO films. Surface and Coatings Technology, 303. pp. 191-196. ISSN 0257-8972

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The plasma characteristics of 355 nm and 532 nm laser ablation of Al-doped ZnO (AZO) target were studied by optical emission spectroscopy and ion probe measurements. Zn emission lines were measured detected at above 0.9 J/cm2 for 355 nm laser and 0.6 J/cm2 532 nm laser respectively, while Al species were detected only above 2 J/cm2. The kinetic energy of the ions was slightly higher for 532 nm ablation as compared to 355 nm ablation. In addition, the ablation of 532 nm laser was affected by the large laser penetration depth. When deposited at 2 and 4 J/cm2, AZO films with energy band gap of 3.45–3.6 eV were obtained. Nanostructured AZO films were obtained by 355 nm laser ablation but nano and micro-particulates were formed in 532 nm laser ablation. The large micron-sized particulates were Al-rich thus affecting not only the morphology but also the stoichiometry of the films. It is thus concluded that despite a lower ablation and growth rate, 355 nm generated Zn, O and also Al species at lower threshold fluence that can lead to high quality AZO films at room temperature.

Item Type: Article
Uncontrolled Keywords: Plasma diagnostic, Pulsed laser deposition, Al-doped ZnO, Ion probe, Optical emission spectroscopy
Subjects: Q Science > QC Physics > QC501-766 Electricity and magnetism > QC501-(721) Electricity > QC717.6-718.8 Plasma physics. Ionized gases
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Suzilawati Abu Samah
Date Deposited: 02 Aug 2018 08:53
Last Modified: 02 Aug 2018 08:53


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