Theoretical Analysis Of Double Heterojunction Bipolar Transistors With Composite Collectors.

Citation

Goh , Yu Ling (2003) Theoretical Analysis Of Double Heterojunction Bipolar Transistors With Composite Collectors. Masters thesis, Multimedia University.

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Abstract

A theoretical investigation of the DC current-voltage (I-V) characteristics and avalanche multiplication in GaInP/GaAs composite collector double heterojunction bipolar transistor (DHBTs) was performed using a physical one-dimensional analytical model developed based on the Ebers-Moll methodology. The concept of carrier transmission, reclection and tunneling at the potential barrier at the heterojunction was expounded in the analytical model.

Item Type: Thesis (Masters)
Subjects: L Education > LB Theory and practice of education > LB2361 Curriculum
Divisions: Faculty of Engineering (FOE)
Depositing User: Ms Rosnani Abd Wahab
Date Deposited: 29 Jun 2010 08:50
Last Modified: 29 Jun 2010 08:50
URII: http://shdl.mmu.edu.my/id/eprint/634

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