Citation

Lee, Meng Chuan and Wong, Hin Yong (2014) Investigation on the impact of program/erase cycling frequency on data retention of nanoscale charge trap nonvolatile memory. IEEE Electron Device Letters, 35 (9). pp. 918-920. ISSN 0741-3106

Text Investigation on the impact of program erase cycling frequency on data retention of nanoscale charge trap nonvolatile memory.pdf Restricted to Repository staff only Download (692kB)

Abstract

This letter presents a detailed study to investigate the impact of program/erase (P/E) cycling frequency on threshold voltage (Vt) instability of nanoscale nitride-based charge trap nonvolatile memory (NB-CTNVM) devices. Post-P/E cycled Vt instability was found to exacerbate with higher P/E cycling frequency, which resulted in lower activation energy (Ea). The Ea obtained is 30% higher than those of floating gate NVM. In view of future demand for faster write speed of NVM devices, these findings indeed have critical impact on the selection of the acceleration factor and Ea applied to assess accurately the reliability performance of nanoscale CTNVM.

Item Type:	Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Nurul Iqtiani Ahmad
Date Deposited:	22 Sep 2014 03:42
Last Modified:	29 Dec 2020 06:37
URII:	http://shdl.mmu.edu.my/id/eprint/5749

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