Citation

Yap, Seong Shan and Siew, Wee Ong and Nee, Chen Hon and Reenaas, Turid Worren and Tou, Teck Yong (2012) Laser ablation and growth of Si and Ge. Thin Solid Films, 520 (8). pp. 3266-3270. ISSN 0040-6090

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Abstract

In this work, we investigated the laser ablation and deposition of Si and Ge at room temperature in vacuum by employing nanosecond lasers of 248 nm, 355 nm, 532 nm and 1064 nm. Time-integrated optical emission spectra were obtained for neutrals and ionized Ge and Si species in the plasma at laser fluences from 0.5 to 11 J/cm2. The deposited films were characterized by using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. Amorphous Si and Ge films, micron-sized crystalline droplets and nano-sized particles were deposited. The results suggested that ionized species in the plasma promote the process of subsurface implantation for both Si and Ge films while large droplets were produced from the superheated and melted layer of the target. The dependence of the properties of the materials on laser wavelength and fluence were discussed.

Item Type:	Article
Subjects:	T Technology > T Technology (General)
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Ms Rosnani Abd Wahab
Date Deposited:	27 Jan 2014 06:41
Last Modified:	27 Jan 2014 06:41
URII:	http://shdl.mmu.edu.my/id/eprint/5014

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