Citation

Nee, Chen Hon and Yap, Seong Shan and Siew, Wee Ong and Reenaas, Turid Worren and Tou, Teck Yong (2013) Optical emission spectroscopy in pulsed laser deposition of silicon. Vacuum, 90 (1). pp. 151-154. ISSN 0042-207X

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Abstract

The generation of a homogeneous plasma plume is necessary for the pulsed laser deposition of thin films. In this work, we investigate the effects of nanosecond-duration laser pulses to ablate polycrystalline Si targets in vacuum (<10-4 Pa) at room temperature. The laser wavelength covers the range from ultra-violet to infrared by using a KrF (248 nm, 25 ns) and a Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) laser. The films were deposited at laser fluences from 1 to 6 J/cm2 and characterized by atomic force microscopy and spectroscopic ellipsometry. Time-integrated optical emission spectra were obtained for excited neutrals and ionized Si species in the plasma produced between 0.5 and 11 J/cm2. The relation between the ionized species and film properties were discussed.

Item Type:	Article
Additional Information:	Including rapid communications and original articles and Special section with papers from the Sixth Symposium on Vacuum-based Science and Technology 20-22 September, 2011, Kolobrzeg, Poland
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Divisions:	Faculty of Engineering (FOE)
Depositing User:	Users 1102 not found.
Date Deposited:	04 Jan 2013 00:39
Last Modified:	18 Feb 2014 05:35
URII:	http://shdl.mmu.edu.my/id/eprint/3774

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