Citation
Lee, W.K. and Wong, H.Y. and Aw, K.C. (2011) An organic programmable diode with pentacene, zinc oxide nanoparticles and polymethylsilsesquioxane. Solid State Communications, 151 (21). pp. 1541-1544. ISSN 00381098 Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/j.ssc.2011.07.032
Abstract
In this paper, we proposed an organic programmable diode as a memory device. This device consists of layers of pentacene and zinc oxide nanoparticles embedded in polymethylsilsesquioxane. The device exhibits a change in current flow of an order up to 10(5) and is comparable or better to many reported organic diode memory devices. A two-barrier model has been used to explain the memory effect of the organic diode. The device can be written and erased multiple times similar to a flash memory. (C) 2011 Elsevier Ltd. All rights reserved.
| Item Type: | Article |
|---|---|
| Subjects: | T Technology > T Technology (General) Q Science > QC Physics |
| Divisions: | Faculty of Engineering and Technology (FET) |
| Depositing User: | Ms Suzilawati Abu Samah |
| Date Deposited: | 05 Jan 2012 07:42 |
| Last Modified: | 05 Jan 2012 07:42 |
| URII: | http://shdl.mmu.edu.my/id/eprint/3322 |
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