Current impulse response of thin InP p+–i–n+ diodes


YOU, A and CHEANG, P (2006) Current impulse response of thin InP p+–i–n+ diodes. Microelectronics Journal, 37 (11). 1285-1288 . ISSN 00262692

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The simulation of current impulse response using random response time model in avalanche photodiode (APD) is presented. A random response time model considers the randomness of times at which the primary and secondary carriers are generated in multiplication region. The dead-space effect is included in our model to demonstrate the impact on current impulse response of thin APDs. Current impulse response of homojunction InP p(+)-i-n(+) diodes with the multiplication widths of 0.1 and 0.2 mu m are calculated. Our results show that dead-space gives a slower decay rate of current impulse response in thin APD, which may degrade the bit-error-rate of the optical communication systems. (c) 2006 Elsevier Ltd. All rights reserved.

Item Type: Article
Subjects: T Technology > T Technology (General)
Q Science > QA Mathematics > QA71-90 Instruments and machines > QA75.5-76.95 Electronic computers. Computer science
Divisions: Faculty of Engineering and Technology (FET)
Depositing User: Ms Suzilawati Abu Samah
Date Deposited: 18 Oct 2011 00:10
Last Modified: 04 Mar 2014 07:10


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